Characterization of Soft Breakdown in Thin Oxide NMOSFETs Based on the Analysis of the Substrate Current

Abstract

We have investigated the properties of soft breakdown (SBD) in thin oxide (4.5 nm) nMOSFETs with measurements of the gate and substrate leakage currents using the carrier separation technique. We have observed that, at lower gate voltages, the level of the substrate current exhibits a plateau. We propose that the observed plateau is due to the Shockley-Hall… (More)

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Cite this paper

@inproceedings{Crupi2001CharacterizationOS, title={Characterization of Soft Breakdown in Thin Oxide NMOSFETs Based on the Analysis of the Substrate Current}, author={Felice Crupi and Giuseppe Iannaccone and Isodiana Crupi and Robin Degraeve and Guido Groeseneken}, year={2001} }