Characterization of Si-doped GaAs cross-sectional surfaces via ab initio simulations

@article{Duan2005CharacterizationOS,
  title={Characterization of Si-doped GaAs cross-sectional surfaces via ab initio simulations},
  author={Xiangmei Duan and Maria Peressi and Stefano Baroni},
  journal={Physical Review B},
  year={2005},
  volume={72},
  pages={085341}
}
Si-doped (110) GaAs cross-sectional surfaces are investigated using first principles calculations with the aim of identifying simple configurations compatible with experimentally detected scanning tunneling microscopy (STM) images characterized by bright signals at negative bias and strongly attenuated when the bias is reversed. Since Si-donor is the most common defect in Si-doped GaAs, we study mainly several Si-donor based configurations, from the isolated impurity to extended defect… 
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