Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-$k$ Dielectric/Metal Gate

@article{Kwon2011CharacterizationOR,
  title={Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-\$k\$ Dielectric/Metal Gate},
  author={Hyuk-Min Kwon and In-Shik Han and Jung-Deuk Bok and Sang-Uk Park and Yi-Jung Jung and Ga-won Lee and Yi-Sun Chung and Jung-Hwan Lee and Chang Yong Kang and P. D. Kirsch and Raj Jammy and Hi-Deok Lee},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={686-688}
}
The behavior of ID random telegraph signal (RTS) noise of a p-MOSFET with an advanced gate stack of HfO2/TaN is experimentally investigated and discussed. The ID-RTS noise is evaluated on a wafer level (100 sites) for statistical evaluation. The observed ratio of ID-RTS noise on a wafer is quite similar to that of a p-MOSFET with the conventional plasma… CONTINUE READING