Characterization of Intrinsic Field-Effect Mobility in TFTs by De-Embedding the Effect of Parasitic Source and Drain Resistances

Abstract

Due to voltage drops across parasitic resistances in semiconductor devices, extracted performance parameters can be strongly dependent on the geometrical structure. In this letter, we report a characterization technique for the intrinsic field-effect mobility μ<sub>FEo</sub> in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) by de-embedding the… (More)

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