Characterization of High-Purity Germanium (Ge) Crystals for Developing Novel Ge Detectors

  title={Characterization of High-Purity Germanium (Ge) Crystals for Developing Novel Ge Detectors},
  author={M. Raut and H. Mei and D. Mei and S. Bhattarai and W.-Z. Wei and R. Panda and P. Acharya and G. Wang},
  journal={arXiv: Instrumentation and Detectors},
  • M. Raut, H. Mei, +5 authors G. Wang
  • Published 2020
  • Physics, Materials Science
  • arXiv: Instrumentation and Detectors
High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier concentration, the Hall mobility, and the electrical resistivity. The reported values have a strong dependence on the size of the ohmic contacts and the geometry of the samples used in conducting the Hall Effect measurements. We conduct a systematic study using four… Expand

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