Characterization of GaAs FET's in Terms of Noise, Gain, and Scattering Parameters through a Noise Parameter Test Set

@inproceedings{Calandra1984CharacterizationOG,
  title={Characterization of GaAs FET's in Terms of Noise, Gain, and Scattering Parameters through a Noise Parameter Test Set},
  author={Enrico F. Calandra and G. Martines and Mario Sannino},
  year={1984}
}
A method for the complete characterization of GaAs FET's in terms of noise parameters (F/sub o/,Gamma/sub on/, R/sub n/), gain parameters (G/sub ao/, Gamma /sub og/, R/sub g/), and of those scattering parameters ( S/sub11/, S/sub22/|,S/sub12/| S/sub21|, /spl angle/S/sub 12/S/sub 21/ ) that are needed for low-noise microwave amplifier design is presented. The instrumentation employed, i.e., a noise-figure measuring system equipped with a vectorial reflectometer, as well as the time consumption… CONTINUE READING

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