Characterization of DC-Stress-Induced Degradation in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

  title={Characterization of DC-Stress-Induced Degradation in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors},
  author={Meng Zhang and Wei Zhou and Rongsheng Chen and Man Wong and Hoi-Sing Kwok},
  journal={IEEE Transactions on Electron Devices},
In this paper, dc-stress-induced degradation in bridged-grain (BG) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) is systemically characterized and investigated. Compared with normal poly-Si TFTs, BG poly-Si TFTs exhibit better hot-carrier (HC) reliability, better self-heating (SH) reliability, and better negative bias temperature (NBT) instability. Resulting from the heavily doped BG lines inside the active channel, lateral electric field reduction at the drain side, Joule heat… CONTINUE READING
4 Extracted Citations
35 Extracted References
Similar Papers

Referenced Papers

Publications referenced by this paper.
Showing 1-10 of 35 references

Highperformance polycrystalline silicon thin-film transistors integrating sputtered aluminum-oxide gate dielectric with bridged-grain active channel

  • M. Zhang, W. Zhou, R. Chen, M. Wong, H.-S. Kwok
  • Semicond. Sci. Technol., vol. 28, no. 11, p…
  • 2013
Highly Influential
7 Excerpts

Study of the characteristics of solid phase crystallized bridged-grain poly-Si TFTs

  • W. Zhou
  • IEEE Trans. Electron Devices, vol. 61, no. 5, pp…
  • 2014
Highly Influential
6 Excerpts

Hot carrier effects in low-temperature polysilicon thin-film transistors

  • Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, Y. Tsuchihashi
  • Jpn. J. Appl. Phys., vol. 40, no. 4B, p. 2833…
  • 2001
Highly Influential
4 Excerpts

Similar Papers

Loading similar papers…