Characterization of DC-Stress-Induced Degradation in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

@article{Zhang2014CharacterizationOD,
  title={Characterization of DC-Stress-Induced Degradation in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors},
  author={Meng Zhang and Wei Zhou and Rongsheng Chen and Man Wong and Hoi-Sing Kwok},
  journal={IEEE Transactions on Electron Devices},
  year={2014},
  volume={61},
  pages={3206-3212}
}
In this paper, dc-stress-induced degradation in bridged-grain (BG) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) is systemically characterized and investigated. Compared with normal poly-Si TFTs, BG poly-Si TFTs exhibit better hot-carrier (HC) reliability, better self-heating (SH) reliability, and better negative bias temperature (NBT) instability. Resulting from the heavily doped BG lines inside the active channel, lateral electric field reduction at the drain side, Joule heat… CONTINUE READING
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