Characterization of Crystallographic Properties and Defects VIA X-ray Microdiffraction in GaN (0001) Layers

@inproceedings{Barabash2006CharacterizationOC,
  title={Characterization of Crystallographic Properties and Defects VIA X-ray Microdiffraction in GaN (0001) Layers},
  author={Rozaliya I. Barabash and Oleg M. Barabash and Gene Emery Ice and Claudia Roder and Stephan Figge and Sven Einfeldt and Didier Hommel and Thomas M. Katona and James Stephen Speck and Steven P. Denbaars and Robert F. Davis},
  year={2006}
}
Intrinsic stresses due to lattice mismatch, high densities of threading dislocations, and extrinsic stresses resulting from the mismatch in the coefficients of thermal expansion, are present in almost all III-Nitride heterostructures. Stress relaxation in the GaN layers occurs in conventional, cantilever (CE) and in pendeo-epitaxial (PE) films via the formation of additional misfit dislocations, domain boundaries, elastic strain and wing tilt. Polychromatic X-ray microdiffraction, high… CONTINUE READING