Characterization of Ar+ based Ion Beam Etching of GaN

@article{Dylewicz2006CharacterizationOA,
  title={Characterization of Ar+ based Ion Beam Etching of GaN},
  author={Rafal Dylewicz and Sergiusz Z. Patela and R. Paszkiewicz and M. Tlaczala and Z. Ryszka},
  journal={2006 International Students and Young Scientists Workshop - Photonics and Microsystems},
  year={2006},
  pages={9-15}
}
In this paper the characterization of dry etching process of gallium nitride epitaxial layers with use of ion beam etching technique (IBE) is presented. Dry etching based patterning of GaN in experimental setup employing Ar+ ions as a milling medium is shortly described in the first part of the article. The parameters of the process, on which the overall etching efficiency i.e. gallium nitride etch rate and etching selectivity depends, were changed successively. Slow-rate etching mode for… CONTINUE READING

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