• Materials Science
  • Published 2018

Characterization of AlGaN/GaN recessed MIS-HEMTs using sputtered SiN as gate dielectric

@inproceedings{Gamachi2018CharacterizationOA,
  title={Characterization of AlGaN/GaN recessed MIS-HEMTs using sputtered SiN as gate dielectric},
  author={Wataru Gamachi and Joel Tacla Asubar and Hirokuni Tokuda and Masaaki Kuzuhara},
  year={2018}
}