Characterization and simulation methodology for time-dependent variability in advanced technologies

Abstract

This paper describes the implications of Bias Temperature Instability (BTI) related time-dependent threshold voltage distributions on the performance and yield of devices and SRAM cells. We show that nFET and pFET time-dependent variability, in addition to the standard time-zero variability, can be fully characterized and projected using a series of… (More)
DOI: 10.1109/CICC.2015.7338379

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Cite this paper

@article{Weckx2015CharacterizationAS, title={Characterization and simulation methodology for time-dependent variability in advanced technologies}, author={Pieter Weckx and Ben Kaczer and Praveen Raghavan and Jacopo Franco and Marco Simicic and Philippe Roussel and Dimitri Linten and Aaron Thean and Diederik Verkest and Francky Catthoor and Guido Groeseneken}, journal={2015 IEEE Custom Integrated Circuits Conference (CICC)}, year={2015}, pages={1-8} }