Characterization and modelling of low-frequency noise in PCM devices

Abstract

Low-frequency noise in PCM devices is experimentally investigated providing a new physical model for the amorphous GST (Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>) material. Noise intensity is characterized and modelled as a function of bias, temperature and size. Findings from 1/f noise analysis are used to understand the drift mechanism of the amorphous… (More)

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