Characterization and modeling of thermally-induced doping contaminants in high-purity germanium

@article{Boldrini2018CharacterizationAM,
  title={Characterization and modeling of thermally-induced doping contaminants in high-purity germanium},
  author={V Boldrini and Gianluigi Maggioni and Sara Maria Carturan and Walter Raniero and Francesco Sgarbossa and Ruggero Milazzo and D. Napoli and Enrico Napolitani and Riccardo Camattari and Davide De Salvador},
  journal={Journal of Physics D: Applied Physics},
  year={2018}
}
High purity Ge (HPGe) is the key material for gamma ray detector production. Its high purity level (< 2x10^(-4) ppb of doping impurity) has to be preserved in the bulk during the processes needed to form the detector junctions. With the goal of improving the device performance and expanding the application fields, in this paper many alternative doping processes are evaluated, in order to verify their effect on the purity of the material. In more detail, we investigated the electrical activation… 

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