Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs

Abstract

This paper presents a generic and complete process to characterize and model the newly developed silicon carbide (SiC) MOSFET. The static characteristics, including MOSFET I-V curves, body diode, nonlinear junction capacitances, as well as package stray inductances, have been fully characterized on a prototype 1.2 kV, 20 A SiC MOSFET under varying… (More)

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@article{Chen2009CharacterizationAM, title={Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs}, author={Zheng Chen and Dushan Boroyevich and Rolando Burgos and Fred Wang}, journal={2009 IEEE Energy Conversion Congress and Exposition}, year={2009}, pages={1480-1487} }