Characterization and comparison of the charge trapping in HfSiON and HfO/sub 2/ gate dielectrics

@article{Shanware2003CharacterizationAC,
  title={Characterization and comparison of the charge trapping in HfSiON and HfO/sub 2/ gate dielectrics},
  author={Arti S. Shanware and M. R. Visokay and J. J. Chambers and A. Rotondaro and J Bryan McPherson and Luigi Colombo},
  journal={IEEE International Electron Devices Meeting 2003},
  year={2003},
  pages={38.6.1-38.6.4}
}
Charge trapping in HfSiON and HfO/sub 2/ gate dielectrics was studied using both DC and pulsed I/sub D/-V/sub G/ characterization techniques. The data shows a significant amount of hysteresis in HfO/sub 2/ but negligible instability in HfSiON. Constant voltage stress measurements of HfO/sub 2/ and HfSiON films show that the threshold voltage shift in HfO/sub 2/ films is as much as 10 times higher than that of HfSiON. Further, modeling of the time dependence of the threshold voltage shows that… CONTINUE READING
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