Characterization and analysis of InGaN photovoltaic devices


The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV… (More)


12 Figures and Tables

Slides referencing similar topics