Characterization and Modeling of Edge Direct Tunneling ( EDT ) Leakage in Ultrathin Gate Oxide MOSFETs

@inproceedings{Yang2001CharacterizationAM,
  title={Characterization and Modeling of Edge Direct Tunneling ( EDT ) Leakage in Ultrathin Gate Oxide MOSFETs},
  author={K. N. Yang and Haitao Huang and Morgan J. Chen and Y. M. Lin and Minbin Yu and S. M. Jang and Douglas C. H. Yu and M. S. Liang},
  year={2001}
}
This paper examines the edge direct tunneling (EDT) of electron from n polysilicon to underlying n-type drain extension in off-state n-channel MOSFET’s having ultrathin gate oxide thicknesses (1.4–2.4 nm). It is found that for thinner oxide thicknesses, electron EDT is more pronounced over the conventional gate-induced-drain-leakage (GIDL), bulk band-to-band tunneling (BTBT), and gate-to-substrate tunneling, and as a result, the induced gate and drain leakage is better measured per unit gate… CONTINUE READING