Characterization and Modeling of 1/$f$ Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides

  title={Characterization and Modeling of 1/\$f\$ Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides},
  author={Rock-Hyun Baek and Chang-Ki Baek and Hyun-Sik Choi and Jeong-Soo Lee and Yun young Yeoh and Kyoung Hwan Yeo and Dong-Won Kim and Kinam Kim and D. M. Kim and Yoon-Ha Jeong},
  journal={IEEE Transactions on Nanotechnology},
In this paper, the volume trap densities Nt are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting Nt, the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing 1/f curve. Also, effective mobility and threshold voltage were simultaneously extracted with the… CONTINUE READING
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