Characterization and Improvement of Power MOSFET Switching Loss

@article{Okabe1983CharacterizationAI,
  title={Characterization and Improvement of Power MOSFET Switching Loss},
  author={Takahiro Okabe and M. Katsueda and Isao Yoshida and Tadako Iijima and S. Ohtaka},
  journal={INTELEC '83 - Fifth International Telecommunications Energy Conference},
  year={1983},
  pages={508-513}
}
A model to evaluate power MOSFET switching loss is developed. Frequency dependencies are measured using a one-transistor forward converter and compared with calculated ones. For comparison, maximum output powers are measured both for power MOSFETs and bipolar transistors. To reduce the switching loss and enable a faster switching a small feedback capacitance device is proposed and realized. 

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Power Handling Capability of MOSFET "1

M. Nagata
Proc. 8-th Conf. Solid State Devices, • 1976

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