Characterization and Comparison of High Blocking Voltage IGBTs and IEGTs Under Hard- and Soft-Switching Conditions

@article{Fujii2008CharacterizationAC,
  title={Characterization and Comparison of High Blocking Voltage IGBTs and IEGTs Under Hard- and Soft-Switching Conditions},
  author={Koji Fujii and Peter K{\"o}llensperger and R. W. de Doncker},
  journal={IEEE Transactions on Power Electronics},
  year={2008},
  volume={23},
  pages={172-179}
}
The market of converters connected to transmission lines continues to require insulated gate bipolar transistors (IGBTs) with higher blocking voltages to reduce the number of IGBTs connected in series in high-voltage converters. To cope with these demands, semiconductor manufactures have developed several technologies. Nowadays, IGBTs up to 6.5-kV blocking voltage and IEGTs up to 4.5-kV blocking voltage are on the market. However, these IGBTs and injection-enhanced gate transistors (IEGTs… CONTINUE READING
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