Characterization and Analysis of 1.3-μm InAs/InGaAs Self-Assembled Quantum Dot Lasers

Abstract

High performance 1.3-μm GaAs-based InAs/InGaAs quantum dot (QD) lasers have been fabricated. The QD lasers have demonstrated low threshold current, high output power as well as high temperature operation. Temperature-dependent (20-100°C) and excitation power-dependent (12-700 mW) photoluminescence (PL) measurements have been carried out on the QD laser… (More)

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