Characteristics of atomic layer deposition grown HfO2 films after exposure to plasma treatments


Ultra thin HfO2 films were grown by the atomic layer deposition (ALD) technique using tetrakismethylethylaminohafnium (Hf[N(CH)3 (C2H5)]4) and ozone (O3) as the precursors and subsequently exposed to various plasma conditions, i.e., CCP (capacitively coupled plasma) and MMT (modified magnetron typed plasma) in N2 or N2/O2 ambient. The conventional CCP… (More)


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