Characteristics of TiO<inf>2</inf> metal-semiconductor-metal photodetectors with O<inf>2</inf> plasma treatment

Abstract

In this study, titanium dioxide (TiO<sub>2</sub>) films were prepared on Corning glass substrates by radio frequency (RF) magnetron sputtering and treated without and with O<sub>2</sub> plasma conditions, and then were used to fabricate metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). The effects of the changes on TiO<sub>2</sub> films were investigated by using field-emission scanning electron microscope (FE-SEM), photoluminescence (PL) system and four-point probe measurement. With a 360-nm illumination and 5 V applied bias, it was found that the responsivities of the fabricated TiO<sub>2</sub> PDs without and with 2 minutes O<sub>2</sub> plasma treatment were 36 and 153 A/W, respectively.

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Cite this paper

@article{Ji2014CharacteristicsOT, title={Characteristics of TiO2 metal-semiconductor-metal photodetectors with O2 plasma treatment}, author={L. W. Ji and I. T. Tang and S. J. Young and T. H. Meen and J. K. Tsai and T. C. Wu and S. J. Chang and Y. P. Luo and K. C. Lee and J. C. Lin and B. Y. Lee}, journal={2014 International Conference on Information Science, Electronics and Electrical Engineering}, year={2014}, volume={1}, pages={63-66} }