Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8A-12A)

@inproceedings{Kang2004CharacteristicsOT,
  title={Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8A-12A)},
  author={Laegu Kang and Katsunori Onishi and Yongjoo Jeon and Wen-Jie Qi and Changseok Kang},
  year={2004}
}
MOSFET’s with equivalent oxide thickness of 81218, have been demonstrated by using high-K gate dielectric thin films (HfO2) and TaN gate electrode. Both self-aligned (higher thermal budget process) and non-self-aligned process (low thermal budget as in the replacement gate process) were used and compared. Excellent electrical characteristics (e.g. S-68mV/dec) and reliability characteristics (e.g. high E B ~ , low charge trapping and SILC) were also obtained. Introduction To span both lOOnm and… CONTINUE READING
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