Characteristics of SEU Current Transients and Collected Charge in GaAs and Si Devices

@article{Shanfield1985CharacteristicsOS,
  title={Characteristics of SEU Current Transients and Collected Charge in GaAs and Si Devices},
  author={Zef Shanfield and Melvin M. Moriwaki and Ward M. Digby and J. R. Srour and Donald E. Campbell},
  journal={IEEE Transactions on Nuclear Science},
  year={1985},
  volume={32},
  pages={4104-4109}
}
Results of transient current and charge collection measurements on GaAs and Si devices bombarded with 5-MeV alpha particles are presented. Upper bounds for risetime and charge collection time of ~120 psec and ~300 psec, respectively, were determined for the GaAs devices studied. The observed lack of funneling for lightly doped Si devices is consistent with… CONTINUE READING