Characteristics of Nb-doped SrTiO<inf>3</inf> and HfO<inf>2</inf>-based selector devices

@article{Guo2016CharacteristicsON,
  title={Characteristics of Nb-doped SrTiO<inf>3</inf> and HfO<inf>2</inf>-based selector devices},
  author={Meiqi Guo and Ying-Chen Chen and Yao-Feng Chang and Xiaohan Wu and Burt W. Fowler and Yonggang Zhao and Jack C. Lee},
  journal={2016 74th Annual Device Research Conference (DRC)},
  year={2016},
  pages={1-2}
}
Recently, resistive random access memory (RRAM) using various metal oxides (i.e., SiO<sub>2</sub>[1], HfO<sub>2</sub>, NiO[2], Al<sub>2</sub>O<sub>3</sub>, NbO) have attracted a lot of attentions since the current nonvolatile memory (NVM) approaching the scaling limits. Meanwhile, the selector devices are essential to address the sneak path issue which causing the reading errors in high-packing-density cross-bar RRAM array. Several types of selector devices with threshold switching (TS… CONTINUE READING