• Corpus ID: 43320880

Characteristics of InGaAsN-GaAsSb type-II ‘ ‘ W ’ ’ quantum wells

  title={Characteristics of InGaAsN-GaAsSb type-II ‘ ‘ W ’ ’ quantum wells},
  author={Jeng-Hsien Yeha and L. J. Mawsta and A. A. Khandekarb and T. F. Kuechb and I. Vurgaftmanc and J. R. Meyerc and N. Tansud},
InGaAsN-GaAsSb type-II ‘‘W’’ quantum well structures have been grown by metalorganic chemical vapor deposition (MOCVD). Photoluminescence and X-ray diffraction measurements indicate that thin layers (2–2.5 nm) of GaAs1 ySby and InGaAs1 xNx can be grown with compositions of y 1⁄4 0:3 and x 1⁄4 0:02. ‘‘W’’ structures with different N contents indicate that emission wavelengths in the 1.4–1.6 mm range can be achieved. The use of GaAs0.85P0.15 tensile strained barrier layers is found to… 

Figures from this paper

MOCVD-Grown Dilute Nitride Type II Quantum Wells
Dilute nitride Ga(In)NAs/GaAsSb ldquoWrdquo type II quantum wells on GaAs substrates have been grown by metal-organic chemical vapor deposition (MOCVD). Design studies underscore the importance of
InAsN/GaSb/InAsN ‘W’ quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations
The electronic band-structure and optical gain properties of dilute-nitride InAsN/GaSb/InAsN type-II ‘W’ quantum wells based mid-infrared laser diodes on InAs substrate are numerically investigated


Strain-engineered InAs'GaAs quantum dots for long-wavelength emission
Using a combination of a seed layer, low-growth rates, and different growth temperatures, we have produced InAs/GaAs quantum dots ~QD’s ! that emit at very long wavelengths ~up to 1.39 mm at 293 K!
Effects of Gas switching sequences on GaAs/GaAs1−ySby superlattices
Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions
A novel active region design is proposed to achieve long-wavelength (/spl lambda/ = 1550-nm) diode lasers based on a type-II quantum-well (QW) design of (In)GaAsN-GaAsSb grown on a GaAs substrate.
Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
Metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current
Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates
A GaAsSb/InGaAs type-II quantum well laser diode on GaAs substrates was demonstrated for the first time. Threshold current density of 610 A/cm/sup 2/ was obtained from a 1.1 mm-long broad area laser
Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells
We report on the photoluminescence (PL) and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells (QWs) as a function of the amount of strain-compensation. The PL intensity of
Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates
Low threshold current density GaAsSb/GaAs quantum well (QW) lasers were realised by metal organic chemical vapour deposition. A record low threshold current density of 190 A/cm/sup 2/ was obtained