• Corpus ID: 43320880

Characteristics of InGaAsN-GaAsSb type-II ‘ ‘ W ’ ’ quantum wells

@inproceedings{Yeha2006CharacteristicsOI,
  title={Characteristics of InGaAsN-GaAsSb type-II ‘ ‘ W ’ ’ quantum wells},
  author={Jeng-Hsien Yeha and L. J. Mawsta and A. A. Khandekarb and T. F. Kuechb and I. Vurgaftmanc and J. R. Meyerc and N. Tansud},
  year={2006}
}

• Jeng-Hsien Yeha, L. J. Mawsta, +4 authors N. Tansud
• Published 2006
• Materials Science, Physics

InGaAsN-GaAsSb type-II ‘‘W’’ quantum well structures have been grown by metalorganic chemical vapor deposition (MOCVD). Photoluminescence and X-ray diffraction measurements indicate that thin layers (2–2.5 nm) of GaAs1 ySby and InGaAs1 xNx can be grown with compositions of y 1⁄4 0:3 and x 1⁄4 0:02. ‘‘W’’ structures with different N contents indicate that emission wavelengths in the 1.4–1.6 mm range can be achieved. The use of GaAs0.85P0.15 tensile strained barrier layers is found to significantly improve the photoluminescence intensity of the ‘‘W’’ structure and result in a wavelength blueshift. r 2005 Published by Elsevier B.V.