Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

@article{Wu2012CharacteristicsOI,
  title={Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD \$\hbox\{Al\}_\{2\}\hbox\{O\}_\{3\}\$ Gate Dielectric},
  author={Chien-Hung Wu and Kow-Ming Chang and Sung-Hung Huang and I-Chung Deng and Chin-Jyi Wu and Wei-Han Chiang and Chia-Chiang Chang},
  journal={IEEE Electron Device Letters},
  year={2012},
  volume={33},
  pages={552-554}
}
This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al<sub>2</sub>O<sub>3</sub> as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low <i>VT</i> of 0.71 V, a small subthreshold… CONTINUE READING

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