Characteristics of HfO/sub 2/ pMOSFET prepared by B/sub 2/H/sub 6/ plasma doping and KrF excimer laser annealing

Abstract

The electrical characteristics of HfO/sub 2/ pMOSFETs prepared by B/sub 2/H/sub 6/ plasma doping and excimer laser annealing were investigated. Various metal gate electrodes were evaluated to protect the high-/spl kappa/ oxide during laser irradiation. Although the aluminum gate electrode showed superior reflectivity to the laser, the equivalent oxide… (More)

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