Chapter 1 Silicon Nanowires : Fabrication and Applications
@inproceedings{Mikolajick2017Chapter1S, title={Chapter 1 Silicon Nanowires : Fabrication and Applications}, author={Thomas Mikolajick and Walter M. Weber}, year={2017} }
Due to the high surface to volume silicon ratio and unique quasi onedimensional electronic structure, silicon nanowire based devices have properties that can outperform their traditional counterparts in many ways. To fabricate silicon nanowires, in principle there are a variety of different approaches. These can be classified into top-down and bottom-up methods. The choice of fabrication method is strongly linked to the target application. From an application point of view, electron devices…
Figures from this paper
References
SHOWING 1-10 OF 142 REFERENCES
Donor deactivation in silicon nanostructures.
- PhysicsNature nanotechnology
- 2009
It is shown that the donor ionization energy increases with decreasing nanowire radius, and that it profoundly modifies the attainable free carrier density at values of the radius much larger than those at which quantum and dopant surface segregation effects set in.
Semiconductor Nanowire Fabrication by Bottom-Up and Top-Down Paradigms
- Chemistry
- 2012
Semiconductor nanowires have been the subject of intensive research investment over the past few decades. Their physical properties afford them applications in a vast network of active…
Top–Down Fabrication of Gate-All-Around Vertically Stacked Silicon Nanowire FETs With Controllable Polarity
- PhysicsIEEE Transactions on Nanotechnology
- 2014
As the current MOSFET scaling trend is facing strong limitations, technologies exploiting novel degrees of freedom at physical and architecture level are promising candidates to enable the…
Top-gated silicon nanowire transistors in a single fabrication step.
- EngineeringACS nano
- 2009
Top-gated silicon nanowire transistors are fabricated by preparing all terminals (source, drain, and gate) on top of the nanowire in a single step via dose-modulated e-beam lithography. This…
Reconfigurable Nanowire Electronics-Enabling a Single CMOS Circuit Technology
- PhysicsIEEE Transactions on Nanotechnology
- 2014
Reconfigurable nanowire transistors are multifunctional switches that fuse the electrical characteristics of unipolar n- and p-type field effect transistors (FETs) into a single universal type of…
Dually active silicon nanowire transistors and circuits with equal electron and hole transport.
- PhysicsNano letters
- 2013
We present novel multifunctional nanocircuits built from nanowire transistors that uniquely feature equal electron and hole conduction. Thereby, the mandatory requirement to yield energy efficient…
Vertical III-V nanowire device integration on Si(100).
- Materials ScienceNano letters
- 2014
We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube…
Polarity-Controllable Silicon Nanowire Transistors With Dual Threshold Voltages
- EngineeringIEEE Transactions on Electron Devices
- 2014
Gate-all-around (GAA) silicon nanowires enable an unprecedented electrostatic control on the semiconductor channel that can push device performance with continuous scaling. In modern electronic…
Silicon Vertically Integrated Nanowire Field Effect Transistors
- Physics
- 2006
Silicon nanowires have received considerable attention as transistor components because they represent a facile route toward sub-100-nm single-crystalline Si features. Herein we demonstrate the…
Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output
- PhysicsNano Research
- 2013
AbstractWe present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial…