Channel length scaling in graphene field-effect transistors studied with pulsed current-voltage measurements.

@article{Meric2011ChannelLS,
  title={Channel length scaling in graphene field-effect transistors studied with pulsed current-voltage measurements.},
  author={Inanc Meric and Cory R. Dean and Andrea F Young and Natalia Baklitskaya and Noah J. Tremblay and Colin Nuckolls and Philip Kim and Kenneth L. Shepard},
  journal={Nano letters},
  year={2011},
  volume={11 3},
  pages={1093-7}
}
We investigate current saturation at short channel lengths in graphene field-effect transistors (GFETs). Saturation is necessary to achieve low-output conductance required for device power gain. Dual-channel pulsed current-voltage measurements are performed to eliminate the significant effects of trapped charge in the gate dielectric, a problem common to all oxide-based dielectric films on graphene. With pulsed measurements, graphene transistors with channel lengths as small as 130 nm achieve… CONTINUE READING
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