Channel-implant dose dependence of hot-carrier generation and injection in submicrometer buried-channel PMOSFET's

Abstract

Hot-carrier generation and gate injection in submicrometer buried-channel PMOSFET's occur rather intensely because of their high doses for deep-channel ion implantation intended for drain punchthrough prevention. The generation and injection have a much stronger dependence on deep implantation than on shallow implantation, in accordance with measurement and… (More)

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