Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drain

Abstract

Channel backscattering ratios of PMOSFETs with various embedded SiGe source/drain structures are analyzed in terms of the scattering theory. We found that both the backscattering ratio and injection velocity are greatly influenced by the location and recess depth of SiGe source/drain. Although the strain-enhanced injection velocity is beneficial to the… (More)

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