Challenges of anamorphic high-NA lithography and mask making

S. Hsu; J. Liu

DOI:10.1515/aot-2017-0024

Corpus ID: 67056068

Challenges of anamorphic high-NA lithography and mask making

@article{Hsu2017ChallengesOA,
  title={Challenges of anamorphic high-NA lithography and mask making},
  author={S. Hsu and J. Liu},
  journal={Advanced Optical Technologies},
  year={2017},
  volume={6},
  pages={293 - 310}
}

S. Hsu, J. Liu
Published 2017
Computer Science
Advanced Optical Technologies

Abstract Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in ‘Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII’, vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in ‘Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII’, vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are… Expand

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