Challenges of anamorphic high-NA lithography and mask making
@article{Hsu2017ChallengesOA, title={Challenges of anamorphic high-NA lithography and mask making}, author={S. Hsu and J. Liu}, journal={Advanced Optical Technologies}, year={2017}, volume={6}, pages={293 - 310} }
Abstract Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in ‘Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII’, vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in ‘Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII’, vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are… Expand
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