Challenges & Advances of Mosfets Using High Mobility Material Channels Novel Quantum-corrected Semi-classical Ensemble Monte Carlo Simulator for Nano-scale Iii-v In0.47ga0.53as Tri-gate Finfets Electron Devices & Applications I

Abstract

Complementary MOSFET (CMOS) using high mobility materials using III-V and Ge channels are expected to be one of promising devices for high performance and low power advanced LSIs in the future under sub-10 nm regime, because of the enhanced carrier conduction properties. The advantages of MOSFETs using those materials can basically originate in the low… (More)

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