CdTe and CdZnTe Crystal Growth and Production of Gamma Radiation Detectors

@article{Lachish2016CdTeAC,
  title={CdTe and CdZnTe Crystal Growth and Production of Gamma Radiation Detectors},
  author={Uri Lachish},
  journal={arXiv: Instrumentation and Detectors},
  year={2016}
}
  • U. Lachish
  • Published 30 December 2016
  • Materials Science
  • arXiv: Instrumentation and Detectors
Bridgman CdTe and CdZnTe crystal growth, with cadmium vapor pressure control, is applied to production of semiconductor gamma radiation detectors. Crystals are highly donor doped and highly electrically conducting. Annealing in tellurium vapors transforms them into a highly compensated state of high electrical resistance and high sensitivity to gamma radiation. N-type detectors, equipped with ohmic contacts, and a grounded guard ring around the positive contact, are not sensitive to hole… 
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