Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy.


Catalyst-free growth of (In)GaN nanowires on (001) silicon substrate by plasma-assisted molecular beam epitaxy is demonstrated. The nanowires with diameter ranging from 10 to 50 nm have a density of 1-2 x 10(11) cm(-2). P- and n-type doping of the nanowires is achieved with Mg and Si dopant species, respectively. Structural characterization by high… (More)
DOI: 10.1021/nl101027x


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