Cat-CVD deposited inverted μc-Si:H/c-Si heterojunction solar cell approach

@article{Matsumoto2008CatCVDDI,
  title={Cat-CVD deposited inverted μc-Si:H/c-Si heterojunction solar cell approach},
  author={Yasuhiro Matsumoto and Mauricio Garc{\'i}a Ortega and F. Wunsch and Zhenrui Yu},
  journal={2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control},
  year={2008},
  pages={456-459}
}
Catalytic chemical vapor deposition (Cat-CVD), is a new technology to obtain device-quality thin films at low substrate temperatures. In the other hand, the inverted microcrystalline-silicon/crystalline-silicon (muc-Si/c-Si) hetero-junction, consists of a solar cell illuminated on the backside, the c-Si part of the hetero-structure. This, structure configuration avoids the light absorption in the heavily-doped emitter (dead-layer) and also eludes the use of transparent conducting oxide (TCO) on… CONTINUE READING