Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effects.

@article{Luo2008CarrierMI,
  title={Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effects.},
  author={Jun-Wei Luo and Alberto G Franceschetti and Alex Zunger},
  journal={Nano letters},
  year={2008},
  volume={8 10},
  pages={
          3174-81
        }
}
Direct carrier multiplication (DCM) occurs when a highly excited electron-hole pair decays by transferring its excess energy to the electrons rather than to the lattice, possibly exciting additional electron-hole pairs. Atomistic electronic structure calculations have shown that DCM can be induced by electron-hole Coulomb interactions, in an impact-ionization-like process whose rate is proportional to the density of biexciton states rho XX. Here we introduce a DCM "figure of merit" R2(E) which… CONTINUE READING
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