Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrode, and self-aligned source and drain

Abstract

A study of electron and hole mobilities for MOSFET devices fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrodes and self-aligned source and drain is presented. High effective electron and hole mobilities, 250 cm/sup 2//V/spl middot/s and 70 cm/sup 2//V/spl middot/s, respectively, were measured at high effective field (>0.5 MV/cm). The… (More)

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