Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVDTM

@inproceedings{Tamulaitis2006CarrierLA,
  title={Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVDTM},
  author={Gintautas Tamulaitis and Jūras Mickevi{\vc}ius and Michael S. Shur and R. S. Qhalid Fareed and Jianping Zhang and Remigijus Gaska},
  year={2006}
}
Carrier lifetimes in GaN epilayers are studied by using time-resolved photoluminescence (TRPL) and light-induced transient grating (LITG) techniques. It is shown that the photoluminescence decay can be described by two coupled exponents with characteristic decay times equal to the carrier lifetime and to the half of the carrier lifetime. Both carrier lifetime and diffusion coefficient have been estimated by using LITG technique. For samples with lifetimes shorter than ∼1 ns, the epilayers with… CONTINUE READING