Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots.

@article{Shamirzaev2010CarrierDI,
  title={Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots.},
  author={T S Shamirzaev and D S Abramkin and A. V. Nenashev and K. S. Zhuravlev and Franti{\vs}ek Troj{\'a}nek and B Dzurn{\'a}k and Petr Mal{\'y}},
  journal={Nanotechnology},
  year={2010},
  volume={21 15},
  pages={155703}
}
Structures with self-assembled InAs quantum dots (QDs) embedded in an AlAs matrix have been studied by steady-state and transient photoluminescence. It has been shown that in contrast to InAs/GaAs QD systems carriers are mainly captured by quantum dots directly from the AlAs matrix, while transfer of carriers captured by the wetting layer far away from QDs… CONTINUE READING