Carrier Mobility/Transport in Undoped-UTB DG FinFETs

@article{Chowdhury2007CarrierMI,
  title={Carrier Mobility/Transport in Undoped-UTB DG FinFETs},
  author={M. Chowdhury and V. P. Trivedi and J A Fossum and Liju S Mathew},
  journal={IEEE Transactions on Electron Devices},
  year={2007},
  volume={54},
  pages={1125-1131}
}
A process/physics-based double-gate (DG) MOSFET model (UFDG), which includes a quantum-based carrier mobility model, is used to examine carrier transport in undoped ultrathin-silicon bodies/channels. The model predicts for {100}-surface devices, in accord with measurements, effective electron and hole mobilities that are dramatically higher than those in contemporary bulk-Si MOSFETs at the same integrated inversion-carrier density. Calibration of UFDG to undoped p- and n-channel DG FinFETs… CONTINUE READING
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