Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn2Ge2Te6 Monolayer, High Curie Temperature, Large Magnetic Crystal Anisotropy

@article{An2022CarrierDM,
  title={Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn2Ge2Te6 Monolayer, High Curie Temperature, Large Magnetic Crystal Anisotropy},
  author={Ziyuan An and Yantao Su and Shuang Ni and Zhaoyong Guan},
  journal={The Journal of Physical Chemistry C},
  year={2022}
}
The Mn 2 Ge 2 Te 6 shows intrinsic ferromagnetic (FM) order, with Curie temperature ( c T ) of 316 K. The FM order origins from superexchange interaction between Mn and Te atoms. Mn 2 Ge 2 Te 6 is half-metal (HM), and spin-β electron is a semiconductor with gap of 1.462 eV. Mn 2 Ge 2 Te 6 tends in-plane anisotropy (IPA), with magnetic anisotropy energy (MAE) of -13.2 meV/f.u.. The Mn 2 Ge 2 Te 6 shows good dynamical and thermal stability. Moreover, Mn 2 Ge 2 Te 6 presents good ferromagnetic and… 

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SHOWING 1-10 OF 71 REFERENCES

Strain-Controllable High Curie Temperature, Large Valley Polarization, and Magnetic Crystal Anisotropy in a 2D Ferromagnetic Janus VSeTe Monolayer.

  • Z. GuanS. Ni
  • Materials Science, Physics
    ACS applied materials & interfaces
  • 2020
The magnetic and electronic phase transitions in the strained VSeTe are observed, which could help researchers to investigate the controllable electronic and magnetic properties in electronics, spintronics, and valleytronics.

Predicted 2D ferromagnetic Janus VSeTe monolayer with high Curie temperature, large valley polarization and magnetic crystal anisotropy.

The high Tc and large valley polarization suggest the 2D Janus VSeTe is a promising magnetic material for potential applications in electronics, spintronics, and valleytronics.

Electrical control of 2D magnetism in bilayer CrI3

Electrical control of magnetism in a bilayer of CrI3 enables the realization of an electrically driven magnetic phase transition and the observation of the magneto-optical Kerr effect in 2D magnets.

Tuning the magnetic properties of Fe3GeTe2 by doping with 3d transition-metals

Controlling the magnetic anisotropy in Cr2Ge2Te6 by electrostatic gating

Electrical control of magnetism of a ferromagnetic semiconductor offers exciting prospects for future spintronic devices for processing and storing information. Here, we report observation of

Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

It is found that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy, which opens up opportunities for potential voltage-controlled magnetoelectronics based on atomically thin van der Waals crystals.

A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.

Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.

Prediction of High Curie Temperature, Large Magnetic Crystal Anisotropy, and Carrier Doping-Induced Half-Metallicity in Two-Dimensional Ferromagnetic FeX3 (X = F, Cl, Br, and I) Monolayers

  • Z. GuanS. Ni
  • Materials Science
    The Journal of Physical Chemistry C
  • 2021
: Two-dimensional (2D) intrinsic ferromagnetic (FM) semiconductors (SCs) are urgent for spintronics. FeX 3 (X = F, Cl, Br, and I) monolayers with intrinsic ferromagnetism are fabricated by density

Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit

Since the discovery of graphene, the family of two-dimensional materials has grown, displaying a broad range of electronic properties. Recent additions include semiconductors with spin–valley

Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2

It is demonstrated that Fe3GeTe2 (FGT), an exfoliable vdW magnet, exhibits robust 2D ferromagnetism with strong perpendicular anisotropy when thinned down to a monolayer.
...