Carrier Diffusion in GaN : A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations

@article{Lhnemann2022CarrierDI,
  title={Carrier Diffusion in 
GaN
: A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations},
  author={Jonas L{\"a}hnemann and Vladimir M. Kaganer and Karl K. Sabelfeld and Anastasya E. Kireeva and U. Jahn and Caroline Ch{\`e}ze and Raffaella Calarco and Oliver Brandt},
  journal={Physical Review Applied},
  year={2022}
}
We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence imaging of the top surface of a GaN(0001) layer with a deeply buried (In,Ga)N quantum well. Varying the acceleration voltage of the primary electrons and comparing the signal from the layer and the quantum well enables us to probe carrier recombination at… 
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Carrier Diffusion in GaN : A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic
Carrier Diffusion in GaN : A Cathodoluminescence Study. I. Temperature-Dependent Generation Volume
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated
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