Carbon nanotube circuit integration up to sub-20 nm channel lengths.

@article{Shulaker2014CarbonNC,
  title={Carbon nanotube circuit integration up to sub-20 nm channel lengths.},
  author={Max M. Shulaker and Jelle Van Rethy and Tony F. Wu and Luckshitha Liyanage and Hai Wei and Zuanyi Li and Eric Pop and Georges G. E. Gielen and H S Philip Wong and Subhasish Mitra},
  journal={ACS nano},
  year={2014},
  volume={8 4},
  pages={3434-43}
}
Carbon nanotube (CNT) field-effect transistors (CNFETs) are a promising emerging technology projected to achieve over an order of magnitude improvement in energy-delay product, a metric of performance and energy efficiency, compared to silicon-based circuits. However, due to substantial imperfections inherent with CNTs, the promise of CNFETs has yet to be fully realized. Techniques to overcome these imperfections have yielded promising results, but thus far only at large technology nodes (1 μm… CONTINUE READING