Carbon-doped p-type (0001) plane AlGaN (Al=0.06 to 0.55) with high hole density

@inproceedings{Kawanishi2012CarbondopedP,
  title={Carbon-doped p-type (0001) plane AlGaN (Al=0.06 to 0.55) with high hole density},
  author={Hideo Kawanishi},
  booktitle={OPTO},
  year={2012}
}
In this paper, promising experimental results for the p-type electrical properties of carbon-doped (C-doped) AlGaN are discussed. P-type conductivity was experimentally achieved in C-doped (0001) plane AlGaN layers with from a small amount to 55% solid Al composition, but not in (0001) plane GaN. The maximum free hole density (determined by van der Pauw geometry-Hall effect measurement) achieved for an AlGaN layer with 10% solid Al composition was p= 3.2 x 1018 cm-3. The maximum net ionized… CONTINUE READING

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