Carbon Nanotubes as Schottky Barrier Transistors

  title={Carbon Nanotubes as Schottky Barrier Transistors},
  author={S.Heinze and J.Tersoff and R.Martel and V.Derycke and J.Appenzeller and Ph.Avouris},
We show that carbon nanotube transistors operate as unconventional “Schottky barrier tran-sistors”, in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental ob-servations, including the quite different effects of doping and adsorbed gases. The electrode geometry is shown… 

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Physics at surfaces

In general there may be "pinning" of the lineup at the metal-NT interface; but here we neglect such pinning, because it is much less important for NT Schottky barriers than for planar interfaces

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    Here we focus on the case of a metallic wire having the same radius as the NT