Capacitance of a double-heterojunction GaAs/AlGaAs structure subjected to in-plane magnetic fields: results of self-consistent calculations

@article{Jungwirth1993CapacitanceOA,
  title={Capacitance of a double-heterojunction GaAs/AlGaAs structure subjected to in-plane magnetic fields: results of self-consistent calculations},
  author={Tom{\'a}{\vs} Jungwirth and L. Smrcka},
  journal={Superlattices and Microstructures},
  year={1993},
  volume={13},
  pages={499-506}
}
Abstract The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped AlGaAs barriers is calculated self-consistently as a function of intensity of the in-plane magnetic field. With increasing field intensity the capacitance initially increases and after reaching a maximum decreases toward a high field limit which is less than its zero field value. This behaviour is attributed to 'breathing', or charge redistribution, of the 2D… 
1 Citations
Non-monotonic behaviour of the energy levels of quantum wells with a large mass mismatch in the presence of an in-plane magnetic field
We present a theoretical study of the electron states in a quantum well with finite barrier height in a magnetic field applied parallel to the quantum well. For large electron mass mismatch between

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