Capacitance–voltage measurements on p–n–p InP structures

@inproceedings{Sequeira2009CapacitancevoltageMO,
  title={Capacitance–voltage measurements on p–n–p InP structures},
  author={C{\'e}sar A.C. Sequeira and Diogo Santos},
  year={2009}
}
Abstract The electrical properties of p-type layers of indium phosphide (InP) formed by the diffusion of zinc into n-type material were studied by capacitance–voltage measurements. A non-correspondence of atom and carrier concentrations was indicated, confirming previous four-point resistivity and Hall Effect studies. Using several specimens, a typical value of 25 was found from C −2 – V and C – V curves for the atom/carrier ratio. The dielectric constant of InP was taken to be 11. The width of… CONTINUE READING